silicon oxide

Definitions

  • WordNet 3.6
    • n silicon oxide a white or colorless vitreous insoluble solid (SiO2); various forms occur widely in the earth's crust as quartz or cristobalite or tridymite or lechatelierite
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Usage

In literature:

The iron and the silicon revert to their oxides while the hydrogen of the water is set free.
"Creative Chemistry" by Edwin E. Slosson
The elements in the iron are rapidly oxidized, the silicon first and then the carbon.
"An Elementary Study of Chemistry" by William McPherson
Silicon and its oxide, silica, find important applications in the manufacture of iron and steel.
"The Economic Aspect of Geology" by C. K. Leith
That is, it is a compound in which oxide of silicon is united with the oxides of aluminum and of beryllium.
"A Text-Book of Precious Stones for Jewelers and the Gem-Loving Public" by Frank Bertram Wade
Silica is the name given to oxide of silicon.
"The Romance of War Inventions" by Thomas W. Corbin
Under normal conditions the silicon oxidizes first.
"Encyclopaedia Britannica, 11th Edition, Volume 14, Slice 7" by Various
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In news:

Silicon oxide memristors could make resistive RAM more compatible with CMOS chip manufacturing.
To create the transistors at the heart of a chip , they started with a thin wafer of elemental silicon and formed a silicon dioxide layer on top by simple thermal oxidation.
Silicon oxide memory poised for applications requiring transparency.
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In science:

CMOS devices are sensitive to ionizing radiation due to the positive charge-up of the silicon oxide.
Single Event Effects in the Pixel readout chip for BTeV
The electrostatic potential at the interface between the buried oxide and the silicon substrate is simulated as a function of the substrate bias for different pixel layouts, varying the size of the charge collecting diodes and evaluating the effect of different guard-ring con figurations.
A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology
The plots on the right show the potential along a section at the surface between the silicon substrate and the buried oxide.
A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology
The reverse bias of the silicon substrate increases the potential at the silicon surface, so that the buried oxide acts as a second gate for the CMOS electronics on top, typically causing a shift in the transistor thresholds as a function of the increasing depletion voltage.
Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels
Silicon on insulator (SOI) technology allows the integration of CMOS electronics on a thin silicon layer which is electrically insulated from the wafer substrate by means of a buried-oxide (BOX).
Monolithic Pixel Sensors in Deep-Submicron SOI Technology
The reverse bias of the sensor substrate increases the potential at the silicon surface, and causes a back-gating effect as the buried oxide may act as a second gate for the CMOS electronics on top, typically causing a shift in the transistor thresholds with increasing depletion voltage.
Monolithic Pixel Sensors in Deep-Submicron SOI Technology
The electrostatic potential at the interface between the buried oxide and the silicon substrate was simulated as a function of the substrate bias for different pixel layouts, varying the size of the charge collecting diodes and evaluating the effect of different guard-ring configurations.
Monolithic Pixel Sensors in Deep-Submicron SOI Technology
Also, they have been shown to play a key role as a buer layer in the epitaxial growth of multifunctional perovskite oxides directly on silicon .
Strain-induced ferroelectricity in simple rocksalt binary oxides
As a result, many recent works have been devoted to the study of AO oxide thin lms on silicon substrates, with a special emphasis on their lattice mismatch, coherence and band osets with Si [2, 7, 8].
Strain-induced ferroelectricity in simple rocksalt binary oxides
Schlom, Thermodynamic stability of binary oxides in contact with silicon, J.
Strain-induced ferroelectricity in simple rocksalt binary oxides
In the third step, trenches between the contacts are etched into the silicon oxide, by the same mixture of SF6 and helium, during which the photoresist acts as an etch mask.
Probing the charge of a quantum dot with a nanomechanical resonator
Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented.
Supersensitive avalanche silicon drift photodetector
On top of this layer of silicon was deposited a thin layer of aluminum oxide (for electrical insulation) and 1000 ˚A of gold on top of an adhesion layer of titanium.
Constraints on Yukawa-Type Deviations from Newtonian Gravity at 20 Microns
Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown and Reliability. World Scientific Publications, 2002. B. P.
Circuit-Level Modeling for Concurrent Testing of Operational Defects due to Gate Oxide Breakdown
Thin Au films were RF sputter-deposited onto 4” oxidized (100) silicon substrates to a nominal thickness of 3 µm, using Perkin Elmer 2400 RF sputtering system. A 15 seconds pre-sputter was used to prepare the substrate surface.
Moisture Effects on Nanowear of Gold Films
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